IndiumV3, Main, Repository, bibRecord, 012780

Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

Identifieur interne : 012780 ( Main/Repository ); précédent : 012779; suivant : 012781

Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

Auteurs : RBID : Pascal:00-0063044

Descripteurs français

Pascal (Inist)
- Spectre absorption, Caractéristique courant tension, Conductivité électrique, Hétérojonction, Fabrication, Dépôt projection, Pulvérisation cathodique, Pulvérisation haute fréquence, Cadmium tellurure, Indium phosphure, Indium oxyde, Etain oxyde, Etude expérimentale, Matériau semiconducteur, Composé binaire, Composé ternaire, In O Sn, 7340L, 7866, InP, In P, CdTe, Cd Te.

English descriptors

KwdEn :
- Absorption spectra, Binary compounds, Cadmium tellurides, Cathode sputtering, Electrical conductivity, Experimental study, Fabrication, Heterojunctions, IV characteristic, Indium oxides, Indium phosphides, Radiofrequency sputtering, Semiconductor materials, Spray coatings, Ternary compounds, Tin oxides.

Abstract

Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 013C72

Links to Exploration step

Pascal:00-0063044

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates</title>
<author><name sortKey="Yakubu, H" uniqKey="Yakubu H">H. Yakubu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, University of Cape Coast</s1>
<s2>Cape Coast</s2>
<s3>GHA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Ghana</country>
<wicri:noRegion>Cape Coast</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ENEA-Centro Ricerche, Localita Granatello</s1>
<s2>80055, Portici (NA)</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>80055, Portici (NA)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Thilakan, P" uniqKey="Thilakan P">P. Thilakan</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ENEA-Centro Ricerche, Localita Granatello</s1>
<s2>80055, Portici (NA)</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>80055, Portici (NA)</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Crystal Growth Center, Anna University</s1>
<s2>Chennai, Tamil-Nadu</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Chennai, Tamil-Nadu</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">00-0063044</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 00-0063044 INIST</idno>
<idno type="RBID">Pascal:00-0063044</idno>
<idno type="wicri:Area/Main/Corpus">013C72</idno>
<idno type="wicri:Area/Main/Repository">012780</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0960-1481</idno>
<title level="j" type="abbreviated">Renew. energy</title>
<title level="j" type="main">Renewable energy</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Binary compounds</term>
<term>Cadmium tellurides</term>
<term>Cathode sputtering</term>
<term>Electrical conductivity</term>
<term>Experimental study</term>
<term>Fabrication</term>
<term>Heterojunctions</term>
<term>IV characteristic</term>
<term>Indium oxides</term>
<term>Indium phosphides</term>
<term>Radiofrequency sputtering</term>
<term>Semiconductor materials</term>
<term>Spray coatings</term>
<term>Ternary compounds</term>
<term>Tin oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Spectre absorption</term>
<term>Caractéristique courant tension</term>
<term>Conductivité électrique</term>
<term>Hétérojonction</term>
<term>Fabrication</term>
<term>Dépôt projection</term>
<term>Pulvérisation cathodique</term>
<term>Pulvérisation haute fréquence</term>
<term>Cadmium tellurure</term>
<term>Indium phosphure</term>
<term>Indium oxyde</term>
<term>Etain oxyde</term>
<term>Etude expérimentale</term>
<term>Matériau semiconducteur</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>In O Sn</term>
<term>7340L</term>
<term>7866</term>
<term>InP</term>
<term>In P</term>
<term>CdTe</term>
<term>Cd Te</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0960-1481</s0>
</fA01>
<fA03 i2="1"><s0>Renew. energy</s0>
</fA03>
<fA05><s2>20</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YAKUBU (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>THILAKAN (P.)</s1>
</fA11>
<fA14 i1="01"><s1>Physics Department, University of Cape Coast</s1>
<s2>Cape Coast</s2>
<s3>GHA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>ENEA-Centro Ricerche, Localita Granatello</s1>
<s2>80055, Portici (NA)</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Crystal Growth Center, Anna University</s1>
<s2>Chennai, Tamil-Nadu</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>155-165</s1>
</fA20>
<fA21><s1>2000</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>20690</s2>
<s5>354000081417650040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2000 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>00-0063044</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Renewable energy</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C40L</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Hétérojonction</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Heterojunctions</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Fabrication</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Fabrication</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Dépôt projection</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Spray coatings</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Cathode sputtering</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Cadmium tellurure</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Cadmium tellurides</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Etain oxyde</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Tin oxides</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>In O Sn</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7340L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7866</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>CdTe</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Cd Te</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fN21><s1>045</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 012780 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 012780 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:00-0063044
   |texte=   Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri